Growing Perfect Single-Crystal Epitaxial Films of (Si2)1-x(GaN)x Solid Solutions on Si (111) Substrates from the Liquid Phase

Abstract

The technological capabilities of the method of liquid-phase epitaxy from a limited volume of Sn solution-melt for obtaining films of substitutional solid solution (Si₂)_1-x(GaN)_x on Si (111) substrates are shown. The grown films had a single-crystal structure with (111) orientation,  n-type  conductivity  with  a resistivity  of  ρ ≈ 1.38 Ω ∙ cm, a carrier concentration of n ≈ 3.4 x 10¹⁶ cm^-3, and a charge carrier mobility of µ ≈ 133 cm²/(V ∙ s). The relatively narrow width (full width at half maximum of 780 arcsec) and high intensity (2 x 10⁵ pulses/s) of the main structural reflection (111)_Si/GaN indicate a high degree of perfection of the crystal lattice of the epitaxial layer (Si₂)_1-x(GaN)_x. The photosensitivity region of p-Si–n-(Si₂)_1-x(GaN)_x heterostructures covers the photon energy range from 1.2 to 2.4 eV, with a maximum at 1.9 eV.