Study of Stability Diagrams of Codoped Silicon Nano-Transistors

Abstract

This study provides insights into the behavior of nanoscale silicon-on-insulator transistor with codoped channels, in particular at low temperatures. The goal is to compare the stability diagrams (plots of current as a function of gate voltage and source-drain bias) for several devices fabricated in the same batch, but having different designed channel widths. For the narrower device, a simple stability diagram containing a small number of Coulomb diamonds is observed, while for the wider device, a relatively more complex set of overlapped Coulomb diamonds indicates the presence of a larger number of quantum dots. Here, it is also shown how applying a vertical electric field by using the substrate voltage can significantly change the current paths in such devices.