Radiation Resistance Studies of PIN Diode Detectors Irradiated with Heavy Ions

Abstract

The controlled destruction of the PIN diode detectors, SIEMENS SFH 870/F170  and  SFH 871/F171,  by the 35 MeV beam of the ¹²C  and  by 24 MeV of the ¹⁴N, respectively, was characterized using nuclear spectroscopy, the surface profile measurements, and the positron annihilation spectroscopy technique. The beam fluence was  in the range of 10¹²–10¹⁴ ions/cm². It has been shown that the fluence  of  10¹² ions/cm² of the ¹²C beam did not allow it to destroy the PIN diode detector. For this purpose, one needs the fluence of at least 4 x 10¹² ions/cm² for the ¹⁴N ions beam and 2.2 x 10¹³ ions/cm² for the ¹²C ions one. The presence of divacancies in the irradiated sample was detected by the positron lifetimes measurements, with the fraction significantly higher for the ¹²C implanted sample. Furthermore, it was found that the surface roughness changed drastically following the implantation, i.e., the arithmetic average of profile height deviations from the mean surface of the ¹⁴N beam implanted sample is significantly higher than of that irradiated with the ¹²C ions and the reference one, and the surface average roughness was about 2–3 times higher.