Low Frequency Noise Properties of InAs/GaSb Superlattice

Abstract

The paper reports 1/f noise properties of InAs/GaSb superlattice as a function of voltage bias and temperature. Noise measurements were compared with standard transport characteristics: mobility and carrier concentration. Interestingly, while these standard characteristics of the two samples are comparable, the 1/f noise is substantially different. The results suggest that low-frequency noise is a more sensitive electronic transport characterization tool than standard techniques based on average current/voltage analysis.