Sb_{2}(S,Se)_{3}-Based Thin Film Solar Cells: Numerical Investigation

Abstract

Recently,  antimony  selenosulfide Sb₂(S,Se)₃-based  thin  film  devices  have  received  particular  attention  from  the  research  community.  Nevertheless,  their  experimental  power  conversion  efficiency  is  still  below  10.5%.  In  the present work, a numerical study of ZnO:Al/i-ZnO/CdS/Sb₂(S,Se)₃/spiro-OMeTAD/contact structure is carried out using a one-dimensional solar cell capacitance simulator. In this study, we focus on investigating the effect of the carriers' densities in main layers, selenium (Se) content in the absorber with different profiles, and using Cu₂O as an alternative hole transport layer. It is found that 10²¹, 10¹⁵, and 10²¹ cm^-3 doping densities in CdS/absorber/hole transport layers, respectively, and gradient Se/(Se+S) content in the range of 0.8–0.9, with the use of Cu₂O as a hole transport layer, give a remarkable power conversion efficiency  of  19.84\%.