Electrical Properties of the n-NiS2/n-CdTe Isotype Heterojunction Fabricated by Spray Pyrolysis

Abstract

The conditions for the fabrication of n-NiS₂/n-CdTe isotype heterojunctions with diode properties by spray pyrolysis of n-NiS₂ thin films on n-CdTe crystalline substrates have been studied.  The temperature dependence of the current–voltage characteristics is analyzed, and the mechanisms of the current generation at the heterojunction at forward and reverse voltages are determined. Based on the analysis of the capacitance–voltage characteristics,  a model of a double Schottky diode for the studied heterojunction is presented, which well describes the observed electrophysical phenomena.